We unleash GaN-on-Silicon
● EasyGaN is a spin-off the CNRS-CRHEA laboratory
● We develop advanced epiwafers for the GaN-on-Si semiconductor
market using Molecular Beam Epitaxy (MBE)
● We aim to provide high-volume epitaxy solutions for mmWaves
devices worldwide
● Comparing to GaN-on-SiC, EasyGaN's new technique of GaN-on-Si
provides affordable epiwafers with the required performance
● We are supported by Banque Publique d'Investissement France
(Bpifrance)
• The world's leading supplier of MBE equipment.
• International recognized CNRS research center
focusing on epitaxy.
• French renowned research institute specializing in
micros and nanotechnologies.
We are members of
Discover Our
Research Production
Al-Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach
for High Temperature Stability of Electron Mobility
Our latest scientific publication on GaN-on-Si for mmWave devices : Low Trapping Effects and
High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by
July 12, 2024
We received the EU Seal of Excellence for our project proposal on "GaN-on-Silicon advanced epiwafer for large scale deployment of
mmWave mobile devices and infrastructure"
December 1, 2023
Elodie CARNEIRO was awarded the Best Student Paper Award at ICNS-14
July 3, 2023
EasyGaN has joined the GaN ValleyTM initiative
June 21, 2023
Our article about GaN-on-Si RF in Compound Semiconductor Magazine