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We unleash GaN-on-Silicon

Ultra-thin GaN-on-Si epistacks for mmWaves

Epiready high-quality AlN-on-Si templates

December 1, 2023

Elodie CARNEIRO was awarded the Best Student Paper Award at ICNS-14

July 7, 2023

Our latest scientific publication on GaN-on-Si for mmWave devices : Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate

July 3, 2023

EasyGaN has joined the GaN ValleyTM initiative

June 21, 2023

Our article about GaN-on-Si RF in Compound Semiconductor Magazine

June 16, 2023

EasyGaN will attend the 17th Silicon Saxony Day in Dresden (21 June). Meet us and find out about the performance of our all-MBE GaN-on-Si HEMT for mmWaves.

April 11, 2023

Meet us at the EuroMBE 2023 conference next week in Madrid (17-19 April) and learn about our all-MBE GaN-on-Si HEMT for mmWaves.

April 11, 2023

EasyGaN will attend the CS International Conference next week (18/19 April). Learn from our all-MBE GaN-on-Si HEMT development for mmWaves.

October 13, 2022

Meet us at Micro Innovation Day III, October 18th in Sophia Antipolis

October 6, 2022

EasyGaN will give 2 talks on MBE and GaN-on-Si for RF at the IWN 2022

September 8, 2022

Fabrice Semond & Sebastian Tamariz gave presentations at ICMBE 2022

June 21st, 2022

Meet us at  CS International Conference in Brussels June 28 and 29

Nov 1st, 2021

Meet us at  CS International Conference in Brussels November 9 and 10

May 15, 2021

EasyGaN joined SAFECluster, a company cluster focussed on Aerospace, Security, Defense, and Environment


Apr 14, 2021

We are happy to strengthen our RF activity by welcoming Élodie Carneiro who joined EasyGaN as a doctorate student. Her thesis will focus on Power Amplifier GaN-on-Si epitaxial stacks and RF HEMT devices for millimeter-wave applications.

Jun 15, 2020

EasyGaN SAS, RIBER SA and the CRHEA-CNRS Laboratory reached an important milestone with the fabrication of a first 200 mm AlN-on-Si template using NH3-MBE.


Jul 03, 2019

EasyGaN is a proud winner of the iLab 2019 innovation award organized by Banque Publique d'Investissement France and the French Ministry of Higher Education, Innovation and Research!

GaN has long been a key semiconductor material in the lighting industry and has become increasingly needed for high quality electronics, MEMS, sensors and more. The need for lower costs, higher yield and new functionalities has put GaN-on-Si at the forefront of the next generation of GaN devices.

EasyGaN provides a broad range of innovating solutions for the growth of GaN on silicon. From epiready templates to complex epistacks, our products tackle GaN-on-Si epitaxial challenges for your application in the fields of optoelectronics, electronics and beyond.

EasyGaN is a startup providing solutions for an easy access to the GaN-on-silicon technology. Located on the French Riviera, EasyGaN is a spin-off of CRHEA-CNRS, an internationally recognized research center with a 20+ years of experience in the epitaxial growth of GaN.

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