We unleash GaN-on-Silicon
● EasyGaN is a spin-off the CNRS-CRHEA laboratory
● We develop advanced epiwafers for the GaN-on-Si semiconductor
market using Molecular Beam Epitaxy (MBE)
● We aim to provide high-volume epitaxy solutions for mmWaves
devices worldwide
● Comparing to GaN-on-SiC, EasyGaN's new technique of GaN-on-Si
provides affordable epiwafers with the required performance
● We are supported by Banque Publique d'Investissement France
(Bpifrance)
We are......
• The world's leading supplier of MBE equipment.
• International recognized CNRS research center
focusing on epitaxy.
• French renowned research institute specializing in
micros and nanotechnologies.
Supported by
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Discover Our
Research Production
Al-Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach
for High Temperature Stability of Electron Mobility
Our latest scientific publication on GaN-on-Si for mmWave devices : Low Trapping Effects and
High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by
October 03, 2024
CEO André Bonnardot Discusses Future Plans in Interview with Le Journal Tribune Côte d'Azur.
September 27, 2024
EasyGaN Attends NXP Semiconductors Innovation Day to Explore Future Technologies!
July 12, 2024
EasyGaN received the EU Seal of Excellence for our project proposal on "GaN-on-Silicon advanced epiwafer for large scale deployment of
mmWave mobile devices and infrastructure"
December 1, 2023
Elodie CARNEIRO was awarded the Best Student Paper Award at ICNS-14
July 3, 2023
EasyGaN has joined the GaN ValleyTM initiative
June 21, 2023
Our article about GaN-on-Si RF in Compound Semiconductor Magazine