
We unlock
GaN-on-Silicon
technology
Ultra-thin HEMTs
RF loss < 0.3 dB/mm
Homogeneity over 200-mm wafers
Nov 1st, 2021
Meet us at CS International Conference in Brussels November 9 and 10
May 15, 2021
Apr 14, 2021
Jun 15, 2020
Jul 03, 2019
EasyGaN is a proud winner of the iLab 2019 innovation award organized by Banque Publique d'Investissement France and the French Ministry of Higher Education, Innovation and Research!
GaN has long been a key semiconductor material in the lighting industry and has become increasingly needed for high quality electronics, MEMS, sensors and more. The need for lower costs, higher yield and new functionalities has put GaN-on-Si at the forefront of the next generation of GaN devices.
EasyGaN provides a broad range of innovating solutions for the growth of GaN on silicon. From epiready templates to complex epistacks, our products tackle GaN-on-Si epitaxial challenges for your application in the fields of optoelectronics, electronics and beyond.