Molecular beam epitaxy for GaN-on-Si.

From epiready templates to full stacks.

The products for your target application.

Decades of GaN experience at your service.

Jun 15, 2020

EasyGaN SAS, RIBER SA and the CRHEA-CNRS Laboratory reached an important milestone with the fabrication of a first 200 mm AlN-on-Si template using NH3-MBE.

 

Jul 03, 2019

EasyGaN is a proud winner of the iLab 2019 innovation award organized by Banque Publique d'Investissement France and the French Ministry of Higher Education, Innovation and Research!

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Epiready AlN-on-Si template for direct 2D GaN growth. Highly resistive AlN, ideal for your radiofrequency and power electronics devices.

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Epiready AlN-on-Si template for direct 3D GaN growth. Ideal for thin GaN epilayers meeting quality standard for optielectronics. MOCVD compatible.

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Patterned epiready AlN-on-Si template for direct strain-engineered growth of 3D GaN. Ideal for thin GaN epilayers meeting quality standard for optoelectronics. MOCVD compatible.

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Tailor-made AlN-on-Si stacks for your target applications in advanced technologies: photonics, optomechanics, NEMS, sensors, acoustic resonators...

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Tailor-made GaN-on-Si stack with highly resistive AlN buffer for your electronic devices.

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GaN has long been a key semiconductor material in the lighting industry and has become increasingly needed for high quality electronics, MEMS, sensors and more. The need for lower costs, higher yield and new functionalities has put GaN-on-Si at the forefront of the next generation of GaN devices.

EasyGaN provides a broad range of innovating solutions for the growth of GaN on silicon. From epiready templates to complex epistacks, our products tackle GaN-on-Si epitaxial challenges for your application in the fields of optoelectronics, electronics and beyond.

EasyGaN is a startup providing solutions for an easy access to the GaN-on-silicon technology. Located on the French Riviera, EasyGaN is a spin-off of Crhea-CNRS, an internationally recognized research center with a 20+ years of experience in the epitaxial growth of GaN.

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