We unleash GaN-on-Silicon
Ultra-thin HEMTs for mmWaves
December 1, 2023
Elodie CARNEIRO was awarded the Best Student Paper Award at ICNS-14
July 7, 2023
July 3, 2023
EasyGaN has joined the GaN ValleyTM initiative
June 21, 2023
Our article about GaN-on-Si RF in Compound Semiconductor Magazine
June 16, 2023
April 11, 2023
April 11, 2023
October 13, 2022
Meet us at Micro Innovation Day III, October 18th in Sophia Antipolis
October 6, 2022
EasyGaN will give 2 talks on MBE and GaN-on-Si for RF at the IWN 2022
September 8, 2022
Fabrice Semond & Sebastian Tamariz gave presentations at ICMBE 2022
June 21st, 2022
Meet us at CS International Conference in Brussels June 28 and 29
Nov 1st, 2021
Meet us at CS International Conference in Brussels November 9 and 10
May 15, 2021
Apr 14, 2021
Jun 15, 2020
Jul 03, 2019
EasyGaN is a proud winner of the iLab 2019 innovation award organized by Banque Publique d'Investissement France and the French Ministry of Higher Education, Innovation and Research!
GaN has long been a key semiconductor material in the lighting industry and has become increasingly needed for high quality electronics, MEMS, sensors and more. The need for lower costs, higher yield and new functionalities has put GaN-on-Si at the forefront of the next generation of GaN devices.
EasyGaN provides a broad range of innovating solutions for the growth of GaN on silicon. From epiready templates to complex epistacks, our products tackle GaN-on-Si epitaxial challenges for your application in the fields of optoelectronics, electronics and beyond.
EasyGaN is a startup providing solutions for an easy access to the GaN-on-silicon technology. Located on the French Riviera, EasyGaN is a spin-off of CRHEA-CNRS, an internationally recognized research center with a 20+ years of experience in the epitaxial growth of GaN.