RF loss < 0.3 dB/mm
Homogeneity over 200-mm wafers
Apr 14, 2021
We are happy to strengthen our RF activity by welcoming Élodie Carneiro who joined EasyGaN as a doctorate student. Her thesis will focus on Power Amplifier GaN-on-Si epitaxial stacks and RF HEMT devices for millimeter-wave applications.
Jun 15, 2020
Jul 03, 2019
EasyGaN is a proud winner of the iLab 2019 innovation award organized by Banque Publique d'Investissement France and the French Ministry of Higher Education, Innovation and Research!
GaN has long been a key semiconductor material in the lighting industry and has become increasingly needed for high quality electronics, MEMS, sensors and more. The need for lower costs, higher yield and new functionalities has put GaN-on-Si at the forefront of the next generation of GaN devices.