Our innovative solutions
LeanAlN
AlN-on-Si templates for high quality GaN
Epiready AlN-on-Si template for direct 2D GaN growth.
Ideal for power electronics devices.
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Highly resistive AlN
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High quality AlN facilitates strain engineering
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Delivers remarkable homogeneity over the whole wafer
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MOCVD compatible
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Available in 100-, 150- and 200-mm diameters
For optoelectronics applications, we offer advanced templates with built-in solution for dislocation reduction
EasyGaN-MBE MOCVD
AlN buffer layer ● 5~150nm (Thinner buffers) ● Minimum of 200nm
● Regrowth directly in 2D mode
Epistack ● Mono-layer control ● 3D mode
● Smooth surface and uniformity
● MOCVD compatible
Highlights ● Thinner device buffers ● Growing fast with unstable quality
● Higher breakdown voltages
● Superior uniformity
LeanGaN
Ultra-thin full epitaxial GaN-on-Si stack for RF electronics
GaN-on-Si stack with highly resistive AlN buffer for mmWave RF devices.
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Ultra-thin buffer for enhanced thermal dissipation and low bow
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RF losses < 0.5 dB/mm
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Remarkable homogeneity over the whole wafer
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No degradation of performance after stress tests
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Available in 100-, 150- and 200-mm diameters
GaN-on-Si GaN-on-SiC
Thermal conductivity 1.5 W/cm.K 4.9 W/cm.K
Cost $ $$$
Dimension Up to 300 mm Up to 150 mm
CMOS compatible Yes No
Substrate sourcing Worldwide commodity Difficult