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AlN-on-Si templates for high quality GaN

Epiready AlN-on-Si template for direct 2D GaN growth. Ideal for power electronics devices.​

  • Highly resistive AlN

  • High quality AlN facilitates strain engineering

  • Delivers remarkable homogeneity over the whole wafer

  • MOCVD compatible

  • Available in 100-, 150- and 200-mm diameters

For optoelectronics applications, we offer advanced templates with built-in solution for dislocation reduction

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Ultra-thin full epitaxial GaN-on-Si stack for RF electronics

GaN-on-Si stack with highly resistive AlN buffer for mmWave RF devices.​

  • Ultra-thin buffer for enhanced thermal dissipation and low bow

  • RF losses < 0.5 dB/mm

  • Remarkable homogeneity over the whole wafer

  • No degradation of performance after stress tests

  • Available in 100-, 150- and 200-mm diameters

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