Company | easygan

Our goal is to provide high-performance GaN-on-Silicon solutions in high volume worldwide

EasyGaN is a startup founded in 2017 which provides innovative epitaxy solutions to unleash the full potential of GaN-on-Silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. We develop epiwafers for the GaN-on-Silicon semiconductor market using Molecular Beam Epitaxy.

Meet Our Team

Fabrice Semond

Co-Founder & CSO

Research Director at CNRS and co-founder of EasyGaN, Fabrice has over 20 years of experience and is the pioneer of the first AlGaN/GaN HEMT which was grown on silicon substrate using MBE. His research focuses on the epitaxy of III-nitride semiconductor materials on silicon.

He is an internationally recognized expert who has been invited to deliver numerous guest lectures at international conferences and a member of national/international scientific committees.

He holds a Ph.D and is the author/co-author of over 200 publications and 9 patents.

André Bonnardot

CEO

André holds a Master of Electrical and Electronics Engineering and MBA degrees.

With over 25-year experience in Mobile/ Semiconductor industry, his leadership is evident in a variety of critical responsibilities in team management at Siemens, Infineon and intel.

Under his leadership, EasyGaN was recognized as a winner of the i-Lab competition in 2019, a prestigious French innovation contest that is dedicated to the support of high-potential start-ups.

His involvement has made EasyGaN a standout player in the complex and worldwide GaN-on-Si ecosystem.

Stéphanie Rennesson

CTO

Doctor in Material Engineering, Stéphanie's study specializes in nitride-based high-electron-mobility transistors (HEMTs), which are crucial in a variety of electronic applications.

She is experienced in advanced materials/devices and she also took part in significant national. international research when working at CNRS-CRHEA.

Her expertise in GaN on silicon for electronic and optoelectronic devices plays a key role in EasyGaN's R&D. She will make sure our custom products accelerate the development of your most advanced technologies.

Antoine Barbier-Cueil

Material science engineer

Antoine joined EasyGaN as an industrial PhD student. His thesis focuses on AlGaN channel HEMT on Si for high-voltage/high-temperature power electronics applications. His roles involve supporting research teams in the development and utilization of MBE reactors.

Abdennacer Benali

Research engineer

Abdennacer (Nasser) is a Doctor of Physics and Material Science from Ecole Centrale de Lyon, where he focused on MBE techniques. He then worked as a postdoctoral researcher at CNRS and went abroad at the Italian National Research Council in Trieste, Italy contributing to research in nanotechnology and material science. He also worked for Astrum LT in Prague, Czech Republic before joining EasyGaN.

He has extensive experience in compound semiconductor epitaxy and is specialized in the growth of III-V and IV-IV materials by MBE.