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Unique GaN-on-Silicon expertise & know-how

EasyGaN is a startup providing epitaxy solutions to unleash the full potential of GaN-on-Silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. We develop epiwafers for the GaN on Silicon semiconductor market using Molecular Beam Epitaxy. Our first product is a very thin high-quality Aluminium Nitride (AlN) layer grown on top of a silicon wafer. This so-called ''AlN template'' is already available and is currently being tested by customers as ideal starting point for their GaN epitaxy. In addition, we are currently developing an ultra-thin GaN on Silicon epiwafer for the Radio Frequency 5G millimeter wave device market.

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Team

Our team has extensive experience in the epitaxial growth of GaN on silicon and  the realization of semiconductor devices.

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André Bonnardot, CEO

Electrical Engineer and MBA, André Bonnardot has 25 years of experience in the Mobile and Semiconductor industry. His leadership and business skills are essential to make EasyGaN a recognized actor in the complex and global GaN-on-Si ecosystem.

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Stéphanie Rennesson, CTO

Doctor in Physics, Stéphanie Rennesson has extensive knowledge in the growth of GaN on silicon for electronic and optoelectronic devices. She is a key part of EasyGaN's R&D and she will make sure our custom products accelerate the development of your most advanced technologies.

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Fabrice Semond, Co-Founder & CSO

Research Director at CNRS, Fabrice Semond has 20+ years of experience in the epitaxial growth of GaN on silicon substrate. This internationally recognized expert will bring you the most advanced epitaxial technique to get the best out of your electronic and optoelectronic devices.

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Sylvain Sergent, Co-Founder

Doctor in Physics, Sylvain Sergent has 10+ years of experience in the epitaxial growth of GaN on silicon substrate. He lead EasyGaN from 2017 to 2020 and has now an advisory role in the company.

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Élodie Carneiro, Research engineer

Electrical engineer, Élodie Carneiro joined EasyGaN as an industrial PhD student. Her thesis focusses on Power Amplifier GaN-on-Si stacks and RF HEMT devices for millimeter-wave applications.

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Antoine Barbier-Cueil, Material science engineer

Electrical engineer, Antoine Barbier-Cueil joined EasyGaN as an industrial PhD student. His thesis focuses on AlGaN channel HEMT on Si for high-voltage/high-temperature power electronics applications.

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Abdennacer Benali, Research engineer

Doctor in Physics, Nasser Benali has deep knowledge of MBE epitaxy equipments and gained a solid experience in compound semiconductor epitaxy.

Partners & Labels

Since its inception, EasyGaN is supported by the Banque Publique d'Investissement France.

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EasyGaN was awarded the iLab 2019 label by BPI France.

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EasyGaN is a member of the "Secure Communicating Solution" Cluster

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EasyGaN is a member of SAFECluster, a company cluster focussed on Aerospace, Security, Defense, and Environment

EasyGaN is a member of the GaN ValleyTM organisation

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