Decades of GaN experience at your service

EasyGaN is a startup providing epitaxy solutions for an easy access to the GaN-on-silicon technology. Located in Sophia Antipolis, EasyGaN is a spin-off of CRHEA-CNRS, an internationally recognised research center with 20+ years of experience in the epitaxial growth of GaN.

Team

Our team has extensive experience in the epitaxial growth of GaN on silicon and  the realization of semiconductor devices.

André Bonnardot, CEO

Electrical Engineer and MBA, André Bonnardot has 25 years of experience in the Mobile and Semiconductor industry. His leadership and business skills are essential to make EasyGaN a recognized actor in the complex and global GaN-on-Si ecosystem.

Fabrice Semond, Co-Founder

Research Director at CNRS, Fabrice Semond has 20+ years of experience in the epitaxial growth of GaN on silicon substrate. This internationally recognized expert will bring you the most advanced epitaxial technique to get the best out of your electronic and optoelectronic devices.

Stéphanie Rennesson, Research engineer

Doctor in Physics, Stéphanie Rennesson has extensive knowledge in the growth of GaN on silicon for electronic and optoelectronic devices. She is a key part of EasyGaN's R&D and she will make sure our custom products accelerate the development of your most advanced technologies.

Élodie Carneiro, Research engineer

Electrical engineer, Élodie Carneiro joined EasyGaN as a doctorate student. Her thesis focusses on Power Amplifier GaN-on-Si stacks and RF HEMT devices for millimeter-wave applications.