Full epitaxial ultra-thin GaN-on-Si stack for RF electronics
Product description
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GaN-on-Si stack for mmWave RF devices
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Available in 100-, 150- and 200-mm diameters
Product features & added value
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Ultra-thin structure
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RF losses < 0.3 dB/mm
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Remarkable homogeneity over the whole wafer
Contact us for detailed specifications !
