Full epitaxial GaN-on-Si stack for RF electronics

Product description

  • GaN-on-Si stack for mmWave RF devices

  • Available in 100-, 150- and 200-mm diameters

Product features & added value

  • Ultra-thin structure

  • RF losses < 0.3 dB/mm

  • Remarkable homogeneity over the whole wafer

Contact us for detailed specifications !

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