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Epiready AlN-on-Si template for direct 2D GaN growth. Highly resistive AlN, ideal for your radiofrequency and power electronics devices.
Epiready AlN-on-Si template for direct 3D GaN growth. Ideal for thin GaN epilayers meeting quality standard for optielectronics. MOCVD compatible.
Patterned epiready AlN-on-Si template for direct strain-engineered growth of 3D GaN. Ideal for thin GaN epilayers meeting quality standard for optoelectronics. MOCVD compatible.
Tailor-made AlN-on-Si stacks for your target applications in advanced technologies: photonics, optomechanics, NEMS, sensors, acoustic resonators...
Tailor-made GaN-on-Si stack with highly resistive AlN buffer for your electronic devices.
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