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We master Molecular Beam Epitaxy (MBE) and provide
High Quality GaN-on-Si

GaN has been a key semiconductor material in the lighting industry for years now and has become increasingly needed for high quality electronic devices, MEMS, sensors and more. Mastering GaN-on-silicon technology however remains a challenge for most, and the commonly used techniques often fail to deliver on the material and device quality levels.

01.

Easy access to state-of-the art GaN-on-Si technology

02.

MOCVD-compatible solutions from epiready templates to full epiwafer stacks.

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03.

High material quality, reproducibility and yield ensured by our unique expertise in MBE.

​04.

Custom epitaxy solutions and services in the fields of optoelectronics, electronics and beyond.

Why EasyGaN?

We rely on original molecular beam epitaxy techniques and offer a broad range of innovating solutions with striking benefits.

●  MBE Advantages : 

☑ Low-temperature processes (nucleation, regrown contact, …)

☑ Very smooth AlN buffer surface morphologies, no V-pits

☑ Very thin and high-purity epilayers

☑ No need for carbon doping

☑ High-purity AlN barriers, and AlGaN channels

☑ Optimal surface passivation thanks to in-situ monitoring

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