Molecular beam epitaxy for high quality GaN-on-Si
GaN has been a key semiconductor material in the lighting industry for years now and has become increasingly needed for high quality electronic devices, MEMS, sensors and more. The GaN-on-sapphire technology is currently the most common approach to GaN devices but the need for lower costs, higher yields and new functionalities has put GaN-on-silicon at the forefront of the next generation of GaN devices. Mastering GaN-on-silicon technology however remains a challenge for most, and the commonly used techniques often fail to deliver on the material and device quality levels.
MBE Advantages :
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Low-temperature processes (nucleation, regrown contact, …)
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Very smooth AlN buffer surface morphologies, no V-pits
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Very thin and high-purity epilayers
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No need for carbon doping
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High-purity AlN barriers, and AlGaN channels
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Optimal surface passivation thanks to in-situ monitoring
EasyGaN relies on original molecular beam epitaxy techniques to circumvent such issues and offer you a broad range of innovating solutions with striking benefits:
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Easy access to state-of-the art GaN-on-Si technology
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MOCVD-compatible solutions from epiready templates to full epiwafer stacks.
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High material quality, reproducibility and yield ensured by the unique advantages of molecular beam epitaxy.
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Proprietary solutions bypass existing intellectual property and offer you an alternative path to GaN-on-Si.
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Dedicated solutions for your GaN devices in the fields of optoelectronics, electronics and beyond.