We master Molecular Beam Epitaxy (MBE) and provide
High Quality GaN-on-Si
GaN has been a key semiconductor material in the lighting industry for years now and has become increasingly needed for high quality electronic devices, MEMS, sensors and more. Mastering GaN-on-silicon technology however remains a challenge for most, and the commonly used techniques often fail to deliver on the material and device quality levels.
01.
Easy access to state-of-the art GaN-on-Si technology
02.
MOCVD-compatible solutions from epiready templates to full epiwafer stacks.
03.
High material quality, reproducibility and yield ensured by our unique expertise in MBE.
04.
Custom epitaxy solutions and services in the fields of optoelectronics, electronics and beyond.
Why EasyGaN?
We rely on original molecular beam epitaxy techniques and offer a broad range of innovating solutions with striking benefits.
● MBE Advantages :
☑ Low-temperature processes (nucleation, regrown contact, …)
☑ Very smooth AlN buffer surface morphologies, no V-pits
☑ Very thin and high-purity epilayers
☑ No need for carbon doping
☑ High-purity AlN barriers, and AlGaN channels
☑ Optimal surface passivation thanks to in-situ monitoring
