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Advanced AlN-on-Si template with built-in solution for dislocation reduction

Product description

  • Epiready AlN-on-Si template for direct 3D GaN growth.

  • Built-in proprietary solution for dislocation reduction.

  • Patented top-surface passivation process for highest reproducibility.

Product features & added value

  • Direct growth of thin and top-quality GaN (TDD a few 10E8 cm-2)

  • Smooth GaN surface within 2μm.

  • Thin epitaxial stack lowers strain issues.

  • EasyGaN 3D growth solution circumvents existing IP.

  • Thin epitaxial stack shortens the growth process.

  • MOCVD compatible.

  • Easily removable silicon substrate.

  • Ideal for optoelectronic applications (LED, UV LED).

How it works
MOCVD-compatible AlN-on-Si template

1. EasyGaN epiready template

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