Advanced AlN-on-Si template with built-in solution for dislocation reduction
Epiready AlN-on-Si template for direct 3D GaN growth.
Built-in proprietary solution for dislocation reduction.
Patented top-surface passivation process for highest reproducibility.
Direct growth of thin and top-quality GaN.
Smooth GaN surface within 2μm.
Thin epitaxial stack lowers strain issues.
EasyGaN 3D growth solution circumvents existing IP.
Thin epitaxial stack shortens the growth process.
Easily removable silicon substrate.
Ideal for optoelectronic applications (LED, UV LED).
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1. EasyGaN epiready template