Product description

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• Epiready AlN-on-Si template for direct 3D GaN growth.

• Built-in proprietary solution for dislocation reduction.

• Patented top-surface passivation process for highest reproducibility.

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Product features & added value

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• Direct growth of thin and top-quality GaN (TDD a few 10E8 cm-2)

• Smooth GaN surface within 2μm.

• Thin epitaxial stack lowers strain issues.

• EasyGaN 3D growth solution circumvents existing IP.

• Thin epitaxial stack shortens the growth process.

• MOCVD compatible.

• Easily removable silicon substrate.

• Ideal for optoelectronic applications (LED, UV LED).

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