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Tailor-made AlN-on-Si stacks

Product Description

  • State-of-the-art AlN stack with high structural quality

  • Thickness ranging from 20 nm to 350 nm

  • Silicon substrate  type and orientation upon request

Product advantages

  • May include highly efficient emitters such as quantum dots and quantum wells for the UV and visible ranges

  • May include a high-mobility electron gas

  • High etching selectivity with silicon

  • Smooth top and bottom surfaces

  • Ideal for various advanced applications in photonics, optomechanics, NEMS, sensors, acoustic resonators...

Contact us for detailed specifications!

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