Tailor-made AlN-on-Si stacks

Product Description

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• State-of-the-art AlN stack with high structural quality

• Thickness ranging from 20 nm to 350 nm

• Silicon substrate  type and orientation upon request

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Product advantages

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• May include highly efficient emitters such as quantum dots and quantum wells for the UV and visible ranges

• May include a high-mobility electron gas

• High etching selectivity with silicon

• Smooth top and bottom surfaces

• Ideal for various advanced applications in photonics, optomechanics, NEMS, sensors, acoustic resonators...

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Contact us for detailed specifications!

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